elektronische bauelemente SSF318W 50v , 200ma , r ds(on) 3.5 n-ch enhancement mode power mosfet 07-feb-2014 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. j1 sot-323 rohs compliant product a suffix of -c specifies halogen & lead-free description typical applications are dcCdc converters, power management in portable and batteryCpowered products such as computers, printers, pcmcia cards , cellular and cordless telephones. features lower gate charge small package outline marking package information package mpq leader size sot-323 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 50 v gate-source voltage v gs 20 v continuous drain current t a =25c i d 200 ma pulsed drain current (tp 10s) i dm 800 ma power dissipation t a =25c p d 150 mw maximum junction-to-ambient r ja 556 c / w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c operating junction and storage temperature range t j , t stg 150, -55~150 c top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
elektronische bauelemente SSF318W 50v , 200ma , r ds(on) 3.5 n-ch enhancement mode power mosfet 07-feb-2014 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 50 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 0.5 - 1.5 v v ds =v gs , i d =1ma gate-body leakage current i gss - - 100 na v gs =20v - - 0.1 v ds =25v, v gs =0 drain-source leakage current i dss - - 0.5 a v ds =50v, v gs =0 - 5.6 10 v gs =2.75v, i d <200ma, t a =-40c ~85c drain-source on-resistance 1 r ds(on) - - 3.5 v gs =5v, i d =200ma forward transconductance g fs 100 - - ms v ds =25v, i d =200ma, f=1khz switch 2 turn-on delay time 1 t d(on) - 20 - turn-off delay time t d(off) - 20 - ns v dd =30v, i d =200ma dynamic input capacitance c iss - 40 - output capacitance c oss - 12 - reverse transfer capacitance c rss - 3.5 - pf v gs =0, v ds =25v, f=1.0mhz notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of ope rating junction temperature.
elektronische bauelemente SSF318W 50v , 200ma , r ds(on) 3.5 n-ch enhancement mode power mosfet 07-feb-2014 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSF318W 50v , 200ma , r ds(on) 3.5 n-ch enhancement mode power mosfet 07-feb-2014 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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